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| SMG2307 -4.0A, -16V,RDS(ON) 60m[ Elektronische Bauelemente P-Channel Enhancement Mode Power Mos.FET RoHS Compliant Product A SC-59 Dim A Min 2.70 1.40 1.00 0.35 1.70 0.00 0.10 0.20 0.85 2.40 Max 3.10 1.60 1.30 0.50 2.10 0.10 0.26 0.60 1.15 2.80 Description The SMG2307 is universally preferred for all commercial industrial surface mount application and suited for low S 2 L 3 Top View B 1 B C D voltage applications such as DC/DC converters. D G G H C J K Features * Super high dense cell design for extremely low RDS(ON) * Reliable and rugged Gate J K L H Drain S D Applications * Power Management in Notebook Computer * Protable Equipment * Battery Powered System All Dimension in mm Source G Marking : 2307 S Absolute Maximum Ratings Parameter Drain-Source Voltage Sate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current Total Power Dissipation Linear Derating Factor Operating Junction and Storage Temperature Range Tj, Tstg 3 Symbol VDS VGS ID@TA=25 C ID@TA=70 C IDM PD@TA=25 C o o o Ratings -16 8 -4.0 -3.3 -12 1.38 0.01 -55~+150 Unit V V A A A W W/ C o o 3 C Thermal Data Parameter Thermal Resistance Junction-ambient 3 Symbol Rthj-a Ratings 90 Unit o C /W http://www.SeCoSGmbH.com/ Any changing of specification will not be informed individual 01-Jun-2002 Rev. A Page 1 of 4 SMG2307 Elektronische Bauelemente -4.0A, -16V,RDS(ON) 60m[ P-Channel Enhancement Mode Power Mos.FET Electrical Characteristics( Tj=25 oC Unless otherwise specified) Parameter Drain-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Gate Threshold Voltage Gate-Source Leakage Current Drain-Source Leakage Current (Tj=25oC) Drain-Source Leakage Current (Tj=70 oC) Static Drain-Source On-Resistance2 Symbol BVDSS BVDS/ Tj VGS(th) IGSS IDSS Min. -16 _ Typ. _ Max. _ _ Unit V V/ oC V nA uA uA Test Condition VGS=0V, ID=-250uA Reference to 25 C ,ID=-1mA VDS=VGS, ID=-250uA VGS= 8V VDS=-16V,VGS=0 VDS=-12V,VGS=0 VGS=-4.5V, ID=-4A VGS=-2.5V, ID=-3A o -0.01 _ _ _ _ _ _ -0.5 _ _ _ _ _ 100 -1 -25 60 70 24 _ _ RDS(ON) Qg Qgs Qgd Td(ON) Tr Td(Off) Tf Ciss Coss Crss Gfs _ _ _ _ _ _ _ _ _ _ _ m[ Total Gate Charge 2 15 1.3 4 8 11 54 36 985 180 160 12 Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time 2 Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Forward Transconductance nC ID=-4.0A VDS=-12V VGS=-4.5V _ _ _ _ VDS=-10V ID=-1A nS VGS=-10V RG=3.3[ RD=10[ 1580 _ _ pF VGS=0V VDS=-15V f=1.0MHz _ _ S VDS=-5V, ID=-4A Source-Drain Diode Parameter Forward On Voltage 2 Symbol VSD Min. _ _ Typ. _ Max. -1.2 _ Unit V Test Condition IS=-1.2A, VGS=0V. Is=4.0A, VGS=0 dl/dt=100A/uS Reverse Recovery Time 2 Trr Qrr 39 26 nS Reverse Recovery Charge _ _ nC Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse widthO 300us, dutycycleO2%. 3.Surface mounted on 1 inch2 copper pad of FR4 board; 270C/W when mounted on min. copper pad. http://www.SeCoSGmbH.com/ Any changing of specification will not be informed individual 01-Jun-2002 Rev. A Page 2 of 4 SMG2307 Elektronische Bauelemente -4.0A, -16V,RDS(ON) 60m [ P-Channel Enhancement Mode Power Mos.FET Characteristics Curve http://www.SeCoSGmbH.com/ Any changing of specification will not be informed individual 01-Jun-2002 Rev. A Page 3 of 4 SMG2307 Elektronische Bauelemente -4.0A, -16V,RDS(ON) 60m[ P-Channel Enhancement Mode Power Mos.FET http://www.SeCoSGmbH.com/ Any changing of specification will not be informed individual 01-Jun-2002 Rev. A Page 4 of 4 |
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